SG-210STF (Crystal Oscillator)

SG-210 STFSG-210 STF

RoHS Compliant pb free
  • Frequency range
    1MHz to 75MHz
  • Supply voltage
    1.6V to 3.6V
  • Function
    Standby(ST)
  • External dimensions
    2.5 × 2.0 × 0.8 mm
  • Operation temperature
    -40°C to +105°C

Specifications (characteristics)

Item Symbol Specifications Condition/Remarks
Output frequency f0 Standard Frequency
1MHz to 75MHz
Please contact us for inquiries regarding available frequencies.
Supply voltage VCC 1.8V Typ.
1.6V to 2.2V
2.5V Typ.
2.2V to 3.0V
3.3V Typ.
2.7V to 3.6V
 
Storage temperature T_stg -40°C to +125°C Store as
bare product.
Operating temperature T_use -40°C to +85°C / -40°C to +105°C
Frequency tolerance f_tol S: ±25 × 10-6 -20°C to +70°C
L: ±50 × 10-6 -40°C to +85°C
Y: ±50 × 10-6, W: ±100 × 10-6 -40°C to +105°C
Current consumption ICC 1.5mA Max. 1.6mA Max. 1.8mA Max. No load condition,
1MHz ≤ f0 ≤ 20MHz
1.8mA Max. 2.0mA Max. 2.2mA Max. No load condition,
20MHz < f0 ≤ 40MHz
2.1mA Max. 2.4mA Max. 2.6mA Max. No load condition,
40MHz < f0 ≤ 60MHz
2.4mA Max. 2.8mA Max. 3.0mA Max. No load condition,
60MHz < f0 ≤ 75MHz
Stand-by current I_std 2.1μA Max. 2.5μA Max. 2.7μA Max. ST
Symmetry SYM 45% to 55% 50% VCC level,
L_CMOS ≤ 15pF
Output
voltage
VOH VCC- 0.4V Min.
VOL 0.4 V Max.
Output load
condition
(CMOS)
L_CMOS 15pF Max.
Input
voltage
VIH 80% VCC Min. ST
VIL 20% VCC Max.
Rise time and Fall time tr / tf 4ns Max. 3ns Max. 20% VCC to 80% VCC level, L_CMOS=15pF
Start-up time t_str 3ms Max. t=0 at 90% VCC+85°C,(+105°C)
Frequency aging f_aging ±3 × 10-6/year Max. +25°C, First year,
VCC= 1.8V,2.5V,3.3V
SSB Phase noise C/N -145 dBc/Hz Typ. @1kHz,f0=48MHz
-158 dBc/Hz Typ. @100kHz,f0=48MHz
-161 dBc/Hz Typ. @Floor Lv.

Product name (Standard form)

External dimensions

dimension(Unit: mm)


Note.
ST pin = HIGH or "open" : Specified frequency output.
ST pin = LOW : Output is high impedance, oscillation stops.


Footprint (Recommended)

footprint(Unit: mm)


To maintain stable operation, provide a 0.01μF to 0.1μF by-pass capacitor at a location as near as possible to the power source terminal of the crystal product (between Vcc - GND).

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