SG3225HBN (Crystal Oscillator )

  • Frequency range
    100MHz to 325MHz
  • Supply voltage
    2.5V, 3.3V
  • Output
    HCSL
  • Function
    Output enable (OE)
  • External dimensions
    3.2 × 2.5 × 1.05mm
  • Phase jitter
    85 fs Typ (f0 = 156.25MHz)
Video: Advantage of HFF
 (High-Frequency Fundamental)

Pb free.

Complies with EU RoHS directive.

SG3225HBN
SG3225HBN

Specifications

Item Symbol Specifications Conditions / Remarks
Output frequency range f0 100MHz to 325MHz Please contact us for inquiries regarding available frequencies.
Supply voltage VCC D:2.5V ±0.125V, C:3.3V ±0.165V
Storage temperature T_stg -55℃ to +125℃ Store as bare product.
Operating temperature T_use G: -40℃ to +85℃, H: -40℃ to +105℃
Frequency tolerance f_tol J: ± 50 × 10-6
(Not available H: -40℃ to +105℃)
Includes initial tolerance, temperature change,
Vcc change and 10 years aging(+25 °C)
L: ± 100 × 10-6 Includes initial tolerance, temperature change,
Vcc change and 10 years aging(+25 °C)
Current consumption ICC 25 mA Typ. , 35mA Max. OE=VCC,with output load
Disable current I_dis 15mA Max. OE=GND
Symmetry SYM 45% to 55% At outputs crossing point
Output voltage VOH 0.75 V Typ., 0.66V to 0.85V DC characteristics, single output
VOL 0 V Typ., -0.15V to 0.15V
Crossing voltage VCR 0.25V to 0.55V  
Output load condition L_HCSL 50Ω  
RS 33Ω
Input voltage VIH 70% VCC Min. OE terminal
VIL 30% VCC Max.
Differential output
rise slew rate/ fall slew rate
Rr / Rf 1 V/ns to 4V/ns Between -0.15 V and 0.15 V of differential output
Start-up time t_str 10ms Max. Time at minimum supply voltage to be 0 s

Phase Jitter

  Output
frequency
100 MHz 125 MHz 156.25 MHz 200 MHz 322.265625 MHz Supply voltage
Phase Jitter [fs]
Offset Frequency
12 kHz to 20MHz
Typ. 110 95 85 75 65 3.3V ± 0.165V
Max. 180 160 140 125 110

External dimensions

(Unit: mm)

  • OE pin = HIGH : Specified frequency output.
  • OE pin = LOW : Output is high impedance.

Footprint (Recommended)

footprint
(Unit: mm)

In order to achieve optimum jitter performance, it is recommended that the capacitor (0.1 μF + 10 μF)
between Vcc and GND pin should be placed as close to the Vcc pin as possible.

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