SG5032CBN (Crystal Oscillator SPXO)

SG7050C*NSG7050C*N
7.0x 5.0x 1.3mm

SG5032C*NSG5032C*N
5.0 ×3.2 ×1.1mm

RoHS Compliantpb free New
  • Frequency range
    1MHz ~ 170MHz (Fundamental mode)
  • Supply voltage
    1.8V to 5.0V
  • Function
    Standby(ST) ⋅⋅⋅SGxxxxCAN / CBN
    Output enable(OE) ⋅⋅⋅SGxxxxCCN
  • Output
    CMOS

Specifications (characteristics)

Item Symbol SG5032CAN
SG7050CAN
SG5032CBN
SG7050CBN
SG5032CCN
SG7050CCN
Conditions / Remarks
Output frequency range f0 1MHz to 75MHz 80MHz to 170MHz 2.5MHz to 50MHz Please contact us about available frequencies.
Supply voltage VCC T:1.6V to 3.6V H: 4.5 V to 5.5 V  
Storage temperature T_stg -40°C to +125°C Storage as single product
Operating temperature T_use B: -20 °C to +70 °C G: -40 °C to +85 °C
H: -40 °C to +105 °C -
Frequency tolerance f_tol D: ±25 × 10-6 ,J: ±50 × 10-6 -20 °C ~ +70 °C
J: ±50 × 10-6 -40 °C to +85 °C
L:±100 × 10-6 - - -40 °C to +105 °C
Current consumption ICC 3.0mA Max. 11mA Max. 20mA Max. No load condition Maximum frequency.
Stand-by current I_std 2.7 µA Max. 10 µA Max. - ST
Disable current I_dis - - 10mA Max. OE=GND
Symmetry SYM 45 % to 55 % 40 % to 60 % 50% VCClevel, L_CMOS ≤ 15 pF
Output voltage VOH 70% VCC Min.  
VOL 0.4V Max.  
Output load condition(CMOS) L_CMOS 15 pF Max. 50 pF Max.  
Input voltage VIH 80% VCC Min. ST
VIL 20% VCC Min.
Rise time/
Fall time
tr / tf 4ns Max. 3ns Max. 5ns Max. 20 % VCC ~ 80 % VCClevel, L_CMOS ≤15 pF
Start-up time t_str 3ms Max. 5ms Max. t=0 at 90 % VCC +85°C,(+105°C)
Frequency aging f_aging ±3 × 10-6 / year Max. ±5 × 10-6 / year Max. +25°C, First year.

Product Name (Standard form)

partnumber

External dimensions

dimensions

(Unit: mm)

Note.
OE pin = "H" or "open" : Specified frequency output.
OE pin = "L" : Output is high impedance.
ST pin = "H" or "open" : Specified frequency output.
ST pin = "L" : Output is high impedance, oscillation stops.



Footprint (Recommended)

Footprint (Recommended)

(Unit: mm)

To maintain stable operation, provide a 0.01uF to 0.1uF by-pass capacitor at a location as near as possible to the power source terminal of the crystal product (between Vcc - GND).

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