TG5032SBN TCXO / VC-TCXO (ULTRA HIGH STABILITY 10pins terminal type)

TG5032CBNTG5032CBN/SBN

Complies with EU RoHS directive. Pb free.
  • Frequency range
    10 MHz to 50 MHz
  • Supply voltage
    3.3V Typ./ 5.0V Typ
  • Frequency / temperature characteristics
    ± 0.28× 10-6 Max. (for Stratum3)
  • Frequency aging
    ± 3.0× 10-6 Max./20years (for Stratum3)
  • External dimensions
    5.0 × 3.2 × 1.45mm (10pins)
  • Applications
    Network system, Stratum3, Microwave BTS
  • Features
    Ultra high stability

Specifications (characteristics)

Item Symbol TG5032CBN
(CMOS)
TG5032SBN
(Clipped sine wave)
Conditions / Remarks
VC-TCXO TCXO VC-TCXO TCXO
Output frequency range f0 10 MHz to 50 MHz  
10, 12.8, 15.36, 16.384, 19.44, 20, 24,
24.576, 25, 26, 27, 30.72, 40, 49.152, 50 MHz
Standard frequency
Supply voltage VCC C: 3.3 V ± 5% , H: 5.0V ± 5%
(Supply voltage range : 2.7 V to 5.5 V)
 
Storage temperature T_stg -40°C to +90°C Storage as single product
Operating temperature T_use G: -40°C to +85°C  
a) Frequency tolerance f_tol ± 1.0 × 10-6Max. (10 MHz ≦ f0 ≦ 40 MHz) After reflow, +25 °C
± 0.9 × 10-6Max. (40 MHz < f0 ≦ 50 MHz)
a) Frequency/
temperature characteristics
fo-TC B: ± 0.28 × 10-6 Max. (for Stratum3)
H: ± 0.25 × 10-6 Max. (for Stratum3): Option
-40°C to +85°C
a) Frequency/
load coefficient
fo-Load ± 0.1 × 10-6 Max. (10 MHz ≦ f0 ≦ 40 MHz) Load ± 10 %
± 0.2 × 10-6 Max. (40 MHz <f0 ≦ 50 MHz)
a) Frequency/
voltage coefficient
fo-VCC ± 0.1 × 10-6 Max. (10 MHz ≦ f0 ≦ 40 MHz) VCC ± 5 %
± 0.2 × 10-6 Max. (40 MHz < f0 ≦ 50 MHz)
a) Frequency aging f_age ± 0.5 × 10-6 Max. +25°C , First year
± 3.0 × 10-6 Max. (for Stratum3) +25°C , 20years
Holdover stability
(Constant temperature)
- ± 0.01 × 10-6 Max. (+25°C ,24 hours) After 10 days of continuous operation.
± 0.04 × 10-6 Max. (+25°C ,24 hours) After 48 hours of continuous operation.
Free-run accuracy   ± 4.6 × 10-6 Max. This includes Item a).
Current consumption ICC 5.0 mA Max. / 6.0 mA Max. 5.0 mA Max. 10 MHz ≦ f0 ≦ 26 MHz (3.3V / 5.0V)
6.0 mA Max. / 8.0 mA Max. 26 MHz < f0 ≦ 40 MHz (3.3V / 5.0V)
8.0 mA Max. / 10.0 mA Max. 40 MHz < f0 ≦50 MHz (3.3V / 5.0V)
Input resistance Rin 100 kΩ Min. - 100 kΩ Min. - VC- GND (DC)
Frequency control range f_cont ± 5 × 10-6 to ± 10 ×10-6 - ± 5 × 10-6 to ± 10 ×10-6 - J,D : VC= 1.5 V ± 1.0 V
 at VCC = 3.3V
K,E : VC= 1.65 V ± 1.0 V
 at VCC = 3.3V
L,H : VC= 2.5 V ± 2.0 V
 at VCC= 5.0V
Frequency change polarity - Positive polarity - Positive polarity -  
Symmetry SYM 45 % to 55 % - GND level (DC cut)
Output voltage VOH 90 % VCC Min. -  
VOL 10 % VCC Max. -  
Output level
VPP - 0.8 Min. Peak to peak.
Rise time / Fall time tr/tf 8.0 ns Max. - 10 % VCC to 90 % VCC level
Load : 15 pF
Start-up time t_str 2.0 sec. Max. (Filter: Standard) / 5.0 ms Max. (Non-Filter: Option) T = 0 at 90 % VCC
Output load condition Load 15 pF 10 kΩ / 10 pF  
Input voltage VIH 0.7 VCC Min. OE terminal
(Enable voltage)
VIL 0.3 VCC Max. OE terminal
(Disable voltage)

Note : Please contact us for requirements not listed in this specification.

Product name (Standard form)

External dimensions

dimension

(Unit: mm)


Footprint (Recommended)

footprint

(Unit: mm)

To maintain stable operation, provide a 0.1 µF by-pass capacitor at a location as near as possible to the power source terminal of the crystal product (between VCC - GND).


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