SG-210SDH (Crystal Oscillator Low-Jitter SPXO)

SG-210SxDSG-210SxH

RoHS Compliant

pb free

  • Frequency range
    80.000MHz to 170.000MHz
    Fundamental mode oscillator
  • Supply voltage
    2.5V Typ.
  • Output
    CMOS
  • Function
    Standby(ST)
  • External dimensions
    2.5 × 2.0 × 0.8mm

Specifications

Item Symbol Specifications Condition/Remarks
SG-210SEH SG-210SDH SG-210SCH
Output frequency range f0 80.000MHz to 170.000MHz
100MHz ,  106.25MHz ,  125MHz ,
133.33MHz ,  150MHz ,  156.25MHz
Standard frequency. ※1
Supply voltage VCC 1.8V ± 10% 2.5V ± 10% 3.3V ± 10% ※2
Storage temperature range T_stg -40°C to +125°C Store as bare product.
Operating temperature range T_use -40°C to +85°C
Frequency tolerance f_tol B: ±50 × 10-6
C: ±100 × 10-6
-20°C to +70°C
L: ±50 × 10-6
M: ±100 × 10-6
-40°C to +85°C
Current consumption ICC 6.0mA Max. 7.0mA Max. 9.0mA Max. No load condition,
80MHz ≦ f0 ≦ 125MHz
8.0mA Max. 9.0mA Max. 11.0mA Max. No load condition,
125MHz < f0 ≦ 170MHz
Stand-by current I_std 10.0µA Max. ST
Symmetry SYM 45% to 55% 50% VCC level,
L_CMOS ≦ 15pF
Output voltage VOH 90% VCC Min. IOH = -4mA
VOL 10% VCC Max. IOL = 4mA
Output load condition
(CMOS)
L_CMOS 15pF Max.  
Input voltage VIH 80% VCC Min. ST
VIL 20% VCC Max.
Rise time / Fall time tr / tf 3ns Max. 2ns Max. 20% VCC to 80% VCC level,
L_CMOS ≦ 15pF
Start-up time t_str 5ms Max. T = 0 at 90% VCC
Jitter ※3 tp-p 22ps Typ. 20ps Typ. Peak to Peak L_CMOS ≦ 15pF
Phase Jitter tPJ 0.7ps Max. 0.6ps Max. Offset frequency:
12kHz to 20MHz
Frequency aging f_aging ±5 × 10-6 / year Max. +25°C, First year

※1.  Please contact us for inquiries regarding non-standard frequencies.
※2.  f0 ≧ 157MHz: VCC ± 5%
※3.  Based on SIA-3100C signal integrity analyzer made from WAVECREST.

Product name (Standard form)

External dimensions

dimension
(Unit: mm)

Note.
ST pin = HIGH or "open" : Specified frequency output.
ST pin = LOW : Output is high impedance, oscillation stops.

Footprint (Recommended)

footprint
(Unit: mm)

To maintain stable operation, provide a 0.01uF to 0.1uF by-pass capacitor at a location as near as possible to the power source terminal of the crystal product (between Vcc - GND).

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