TG2016SBN ((TCXO / VC-TCXO) HIGH STABILITY)

TCXO TG2016SBNTG2016SBN

Complies with EU RoHS directive.

Pb free.

  • Output frequency
    13 MHz to 55MHz
  • Supply voltage
    1.8 V Typ./ 2.8 V Typ./ 3.0 V Typ./ 3.3 V Typ.
  • Frequency / temperature characteristics
    ±0.5 × 10-6 Max. (-40°C to +85°C)
    ±2.0 × 10-6 Max. (-40°C to +85°C)
  • External dimensions
    2.0 × 1.6 × 0.73mm
  • Applications
    GPS,RF
    Wireless communication devices(CDMA, WCDMA, LTE, WiMAX, others)
  • Features
    Wide supply voltage (1.7 to 3.63V)
    High stability , Low noise

Specifications (characteristics)

Item Symbol Specifications Conditions / Remarks
VC-TCXO TCXO
Output
frequency range
f0 13 MHz to 55MHz
16MHz , 16.368MHz , 16.369MHz , 16.384MHz , 16.8MHz , 19.2MHz ,
20MHz , 26MHz , 27MHz , 28.974MHz , 30MHz , 32MHz , 37.4MHz ,
38.4MHz , 39MHz , 40MHz
Standard frequency
Supply voltage VCC 1.8V ±0.1V /2.8V ±5% /3.0V ±5% /3.3V ±5% Supply voltage range:1.7V to 3.63V
Storage temperature T_stg -40°C to +90°C Storage as single product.
Operating temperature T_use G: -40°C to +85°C
Frequency tolerance f_tol ±1.5 ×10-6 Max. After reflow,+25°C
Frequency/temperature characteristics f0-TC C: ±0.5 × 10-6 Max. / G: -40°C to +85°C
F: ±2.0 × 10-6 Max. / G: -40°C to +85°C
 
Frequency/load coefficient f0-Load ±0.1 × 10-6 Max. 10kΩ // 10pF ±10%
Frequency/voltage coefficient f0-VCC ±0.1 × 10-6 Max. VCC ± 5%
Frequency aging f_age ±0.5 × 10-6 Max. +25°C,First year,13 MHz≤ f0 ≤40 MHz
±1.5 × 10-6 Max. +25°C,First year,40 MHz< f0 ≤55 MHz 
Current
consumption
ICC 1.2 mA Max. 13 MHz ≤ f0 < 16 MHz
1.4 mA Max. 16 MHz ≤ f0 ≤ 27 MHz
1.5 mA Max. 27 MHz ≤ f0 ≤ 36 MHz
1.8 mA Max. 36 MHz ≤ f0 ≤ 40 MHz
2.0 mA Max. 40 MHz ≤ f0 ≤ 52 MHz
2.2 mA Max. 52 MHz < f0 ≤ 55 MHz
Input resistance Rin 500 kΩ Min. - VC - GND(DC)
Frequency control range f_cont ±8.0 × 10-6 to ±12 × 10-6 - B: VC =0.9V ±0.6V (VCC=1.8V)
C: VC =1.4V ±1.0V (VCC=2.8V)
D: VC =1.5V ±1.0V (VCC=3.0V)
E: VC =1.65V ±1.0V (VCC=3.3V)
Frequency change polarity - Positive polarity -  
Symmetry SYM 45% to 55% GND level(DC cut)
Output voltage VPP 0.8V Min. peak to peak
Start-up time t_str 1.0 ms Max. t=0 st 90% Vcc
Output load condition Load_R 10kΩ DC cut capacitor = 0.01µF
Load_C 10pF

Note:Please contact us for requirements not listed in this specification.

TCXO tg2016sbn dimension

External dimensions

TCXO tg2016sbn dimension

(unit: mm)

Footprint (Recommended)

TCXO tg2016sbn footprint

(Unit: mm)

To maintain stable operation, provide a 0.01uF to 0.1uF by-pass capacitor at a location as near as possible to the power source terminal of the crystal product (between Vcc - GND).

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