TG5032CBN TCXO / VC-TCXO (ULTRA HIGH STABILITY 10pins terminal type)

TG5032CBNTG5032CBN

Complies with EU RoHS directive.

Pb free.

  • Frequency range
    10MHz to 50MHz
  • Supply voltage
    3.3V Typ./5.0V Typ.
  • Frequency / temperature characteristics
    ±0.28× 10-6 Max.(for Stratum3)
  • Frequency aging
    ±3.0× 10-6 Max./20years(for Stratum3)
  • External dimensions
    5.0 × 3.2 × 1.45mm(10pins)
  • Applications
    Network system, Stratum3, Microwave BTS
  • Features
    Ultra high stability

Specifications (characteristics)

Item Symbol TG5032CBN
(CMOS)
Conditions / Remarks
VC-TCXO TCXO
Output frequency range f0 10 MHz to 50 MHz  
10 , 12.8 , 15.36 , 16.384 , 19.44 , 20 , 24 ,
24.576 , 25 , 26 , 27 , 30.72 , 40 , 49.152 , 50 MHz
Standard frequency
Supply voltage VCC C : 3.3 V ± 5 % , H : 5.0 V ± 5 %
( Supply voltage range : 2.7 V to 5.5 V )
 
Storage temperature T_stg G : -40 °C to +90 °C Storage as single product
Operating temperature T_use -40 °C to +85 °C  
a) Frequency tolerance f_tol ±1.0 × 10-6 Max. ( 10 MHz ≦ f0 ≦ 40 MHz ) After reflow , +25 °C
±0.9 × 10-6 Max. ( 40 MHz < f0 ≦ 50 MHz )
b) Frequency /
temperature
characteristics
fo-TC B : ±0.28 × 10-6 Max. ( for Stratum3 )
H : ±0.25 × 10-6 Max. ( for Stratum3 ) : Option
-40 °C to +85 °C
±1.0 × 10-6 Max. ( for Microwave BTS )
c) Frequency /
load coefficient
fo-Load ±0.1 × 10-6 Max. ( 10 MHz ≦ f0 ≦ 40 MHz ) Load ±10 %
±0.2 × 10-6 Max. ( 40 MHz < f0 ≦ 50 MHz )
d) Frequency /
voltage coefficient
fo-VCC ±0.1 × 10-6 Max. ( 10 MHz ≦ f0 ≦ 40 MHz ) VCC± 5%
±0.2 × 10-6 Max. ( 40 MHz < f0 ≦ 50 MHz )
e) Frequency aging f_age ±0.5 × 10-6 Max. +25 °C , First year
±3.0 × 10-6 Max. ( for Stratum3 ) +25 °C , 20years
Holdover stability
(Constant temperature)
- ±0.01 × 10-6 Max. ( +25 °C , 24hours ) After 10 days of continuous operation.
±0.04 × 10-6 Max. ( +25 °C , 24hours ) After 48 hours of continuous operation.
Free-run accuracy - ±4.6 × 10-6 Max. This includes Item a) , b) , c) , d) , e)
Current consumption ICC 5.0 mA Max. ( 3.3 V ) / 6.0 mA Max. ( 5.0 V ) 10 MHz ≦ f0 ≦ 26 MHz
6.0 mA Max. ( 3.3 V ) / 8.0 mA Max. ( 5.0 V ) 26 MHz < f0 ≦ 40 MHz
8.0 mA Max. ( 3.3 V ) / 10.0 mA Max. ( 5.0 V ) 40 MHz < f0 ≦ 50 MHz
Input resistance Rin 100 kΩ Min. - VC - GND (DC)
Frequency control range f_cont ±5 × 10-6 to ±10 ×10-6 - J , D : VC = 1.5 V ± 1.0 V at VCC = 3.3 V
K , E : VC = 1.65 V ± 1.0 V at VCC = 3.3 V
L , H : VC = 2.5 V ± 2.0 V at VCC = 5.0 V
Frequency change polarity - Positive polarity -  
Symmetry SYM 45 % to 55 % GND level (DC cut)
Output voltage VOH 90 % VCC Min.  
VOL 10 % VCC Max.  
Rise time / Fall time tr/tf 8.0 ns Max. 10 % VCC to 90 % VCC level
Load : 15 pF
Start-up time t_str 2.0 sec. Max.(Filter: Standard) / 5.0 ms Max.(Non-Filter: Option) T = 0 at 90 % VCC
Output load condition Load 15 pF  
Input voltage VIH 0.7 VCC Min. OE terminal
(Enable voltage)
VIL 0.3 VCC Max. OE terminal
(Disable voltage)

Note : Please contact us for requirements not listed in this specification.



Product name (Standard form)

External dimensions

dimension

(Unit: mm)

Footprint (Recommended)

footprint

(Unit: mm)

To maintain stable operation, provide a 0.1 µF by-pass capacitor at a location as near as possible to the power source terminal of the crystal product (between VCC - GND).

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