TG5032CFN TCXO / VC-TCXO (ULTRA HIGH STABILITY 4pins terminal type)
- Frequency range
10MHz to 40MHz
- Output waveform
CMOS
- Supply voltage
3.3 V Typ.
- Frequency / temperature characteristics
± 0.1× 10-6 Max. (-40°C to +85°C)
- Frequency aging
± 3.0× 10-6 Max. / 20 years
- External dimensions
5.0 × 3.2 × 1.45mm (4pins)
- Applications
Small Cells, Stratum3, SyncE, IEEE1588
- Features
Ultra high stability, Wide temperature range
TG5032CFN
(1.5MB)Design Support Data Download
Specifications (characteristics)
| Item | Symbol | TG5032CFN (CMOS) |
Conditions / Remarks | |||
|---|---|---|---|---|---|---|
| VC-TCXO | TCXO | |||||
| Output frequency range | f0 | 10 MHz to 40 MHz | ||||
| 10, 12.8, 19.2, 20, 24.576, 25, 25.6, 26, 30.72, 38.4, 38.88, 40 MHz |
Standard frequency | |||||
| Supply voltage | VCC | C: 3.3 V ± 5 % ( Standard ) (Supply voltage range :2.375 V to 3.63 V) |
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| Storage temperature | T_stg | -40°C to +90°C | Storage as single product | |||
| Operating temperature | T_use | G : -40°C to +85°C | ||||
| a) Frequency tolerance | f_tol | ± 1.0 × 10-6Max. |
After reflow, +25 °C | |||
| b) Frequency/ temperature characteristics |
fo-TC | A: ±0.1 × 10-6 Max. / G : -40°C to +85°C H : ±0.25 × 10-6 Max. / G : -40°C to +85°C B: ±0.28 × 10-6 Max. / G : -40°C to +85°C |
Reference to (fmax + fmin) / 2 | |||
| c) Frequency/ load coefficient |
fo-Load | ± 0.1 × 10-6 Max. | Load ± 10 % | |||
| d) Frequency/ voltage coefficient |
fo-VCC | ± 0.1 × 10-6 Max. | VCC ± 5 % | |||
| e) Frequency aging | f_age | ± 0.5 × 10-6 Max. | +25°C , First year | |||
| ± 3.0 × 10-6 Max. | +25°C , 20 years | |||||
| Holdover stability (Constant temperature) |
- | ± 0.01 × 10-6 Max. (+25°C, 24 hours) | After 10 days of continuous operation. | |||
| ± 0.04 × 10-6 Max. (+25°C, 24 hours) | After 48 hours of continuous operation. | |||||
| Wander generation ( MTIE, TDEV ) |
- | - | Compliant with GR-1244CORE , ITU-T G.8262 |
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| Free-run accuracy | - | ± 4.6 × 10-6 Max. | This includes Item a), b), c), d) and e) | |||
| Current consumption | ICC | 5.0 mA Max. | 10 MHz ≦ f0 ≦ 26 MHz |
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| 6.0 mA Max. | 26 MHz < f0 ≦ 40 MHz |
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| Input resistance | Rin | 100 kΩ Min. | - | VC- GND (DC) | ||
| Frequency control range | f_cont | ± 5 × 10-6 to ± 10 ×10-6 | - | D : VC= 1.5 V ± 1.0 V at VCC = 3.3V E : VC= 1.65 V ± 1.0 V at VCC = 3.3V |
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| Frequency change polarity | - | Positive polarity | - | |||
| Symmetry | SYM | 45 % to 55 % | GND level (DC cut) | |||
| Output voltage | VOH | 90 % VCC Min. | ||||
| VOL | 10 % VCC Max. | |||||
| Rise time / Fall time | tr/tf | 8.0 ns Max. | 10 % VCC to 90 % VCC level Load : 15 pF |
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| Start-up time | t_str | 5.0 ms Max. | T = 0 at 90 % VCC | |||
| Output load condition | Load | 15 pF | ||||
Note : Please contact us for requirements not listed in this specification.
External dimensions
(Unit: mm)
Footprint (Recommended)
(Unit: mm)
To maintain stable operation, provide a 0.1 µF by-pass capacitor at a location as near as possible to the power source terminal of the crystal product (between VCC - GND).
