1. Epson Crystal Devices Top

TG-5035CG (TCXO)
Miniature Size Low Profile High Stability

Parametric Search

Inventory Search

Brief Sheetpdf

TG-5035CGTG-5035CG

Complies with EU RoHS directive.

Pb free.

  • Frequency range
    13MHz to 52MHz
  • Supply voltage
    1.8V Typ.
  • Frequency / temperature characteristics
    ±0.5× 10-6 Max.
  • External dimensions
    2.5 × 2.0 × 0.8mm
  • Features
    High Stability
    Low supply voltage (1.8V)
  • Applications
    Cellular phone (GPS),Wireless communication

Specifications

Item Symbol Specifications Conditions/ Remarks
VC-TCXO TCXO
Output frequency range f0 13.000MHz to 52.000MHz
13MHz,16.368MHz,19.2MHz,
26MHz,27.456MHz,38.4MHz		 Standard frequency
Supply voltage VCC 1.8V ±0.1V (Supply voltage range: 1.7V to 3.3V)  
Storage temperature T_stg -40°C to +85°C Store as bare product.
Operating temperature T_use -30°C to +85°C
Frequency tolerance f_tol ±2.0 ×10-6 Max. After reflow, +25°C
Frequency/temperature characteristics fo-TC ±0.5 × 10-6 Max. / -30°C ~ +85°C
±0.5 × 10-6 Max. / -40°C ~ +85°C(Option)
Frequency/load coefficient fo-Load ±0.2 × 10-6 Max. 10kΩ // 10pF ±10%
Frequency/voltage coefficient fo-VCC ±0.2 × 10-6 Max. VCC=1.8V
±0.1V
Frequency aging f_age ±1.0 × 10-6 Max. +25°C, First year, 13MHz≤ f0≤40MHz
±1.5 × 10-6 Max. +25°C, First year, 40MHz< f0≤52MHz
Current consumption ICC 2.0mA Max.  
Input resistance Rin 500kΩ Min. - VC- GND (DC)
Frequency control range f_cont ±5.0 × 10-6 to ±12.0 × 10-6 - VC=0.9V ±0.6V
Frequency change polarity - Positive polarity -
Symmetry SYM 40% to 60% GND level (DC cut)
Output voltage VPP 0.8V Min. Peak to peak
Output load condition Load_R 10kΩ DC cut capacitor = 0.01µF
Load_C 10pF

* Note : Please contact us for inquiries about specifications other than the above.

Product name (Standard form)

External dimensions

dimension

(Unit: mm)

Please keep "N.C." pin OPEN condition or GND connection.
"N.C." pin doesn’t work as a ground pin.

Footprint (Recommended)

footprint

(Unit: mm)

To maintain stable operation, provide a 0.01uF to 0.1uF by-pass capacitor at a location as near as possible to the power source terminal of the crystal product (between Vcc - GND).

Page Top