• Frequency range
    600 MHz ~ 800 MHz
  • Supply voltage
    2.5 V / 3.3 V
  • External dimensions
    7.0 × 5.0 × 1.5 mm (6pins)
  • Absolute Pull Range
    ±50 × 10-6Min ,±100 × 10-6Min
  • Function
    Output enable(OE) Active High
  • Output

Pb free.

Complies with EU RoHS directive.


Specifications (characteristics)

Item Symbol Specifications Conditions / Remarks
Output frequency range f0 600 MHz to 800 MHz Please contact us about available frequencies.
Standard frequency
Supply voltage VCC D:2.5V ±0.125V
C:3.3V ±0.33V
Storage temperature range T_stg -55°C to +125°C Storage as single product.
Operating temperature range T_use G:-40°C to +85°C,
Frequency tolerance *1 f_tol J: ± 50 × 10-6
Current consumption ICC 90mA Max.
Absolute pull range APR B: ± 50 × 10-6Min.,
C: ± 100 × 10-6Min.
VC=1.65 V ±1.35 V (Vcc =3.3 V)
VC=1.25 V ±1.00 V (Vcc=2.5 V)
Input resistance Rin 5MΩ Min. DC characteristics
Frequency change polarity
- Positive slope 0 to VCC
Symmetry SYM 45% to 55% at outputs crossing point
High output voltage VOH VCC- 1.025V Min. DC characteristics
VOL VCC- 1.62V Max.
Low output voltage
L_ECL 50Ω Terminal to VCC-2.0V
Output load condition VIH 70% VCC Min.  
VIL 30% VCC Max.
Fall times
tr / tf 0.4ns Max. Between
20% and 80% of (VOH- VoL)
Oscillation start up time t_str 10 ms Max. Time at minimum supply voltage to be 0 s
Phase Jitter tPJ 0.2 ps Typ. Offset Frequency:12kHz~20MHz

*1Frequency tolerance includes initial frequency tolerance, temperature variation, supply voltage change and reflow drift and 10 years aging at +25 oC.

Product name (Standard form)

Product name

OE Function / OE Standby Type

OE Function OE Standby Type Frequency output
OE pin
Oscillator Stop
OE pin OUT,
H:Active High Z: High-Z "H" or "OPEN" "L" High Impedance
L:Active Low "L" or "OPEN" "H"
H:Active High L "H" or "OPEN" "L" OUT="L", OUTN="H"
L:Active Low "L" or "OPEN" "H"

External dimensions

External dimensions

(Unit: mm)

Footprint (Recommended)


(Unit: mm)

To maintain stable operation, provide by-pass capacitor with approximately 0.1 µF at a location as near as possible to the power source terminal of the crystal products (between VCC -GND).

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